JPS636740U - - Google Patents

Info

Publication number
JPS636740U
JPS636740U JP9983786U JP9983786U JPS636740U JP S636740 U JPS636740 U JP S636740U JP 9983786 U JP9983786 U JP 9983786U JP 9983786 U JP9983786 U JP 9983786U JP S636740 U JPS636740 U JP S636740U
Authority
JP
Japan
Prior art keywords
semiconductor device
fuse
measures
electrostatic damage
utility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9983786U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9983786U priority Critical patent/JPS636740U/ja
Publication of JPS636740U publication Critical patent/JPS636740U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP9983786U 1986-07-01 1986-07-01 Pending JPS636740U (en])

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9983786U JPS636740U (en]) 1986-07-01 1986-07-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9983786U JPS636740U (en]) 1986-07-01 1986-07-01

Publications (1)

Publication Number Publication Date
JPS636740U true JPS636740U (en]) 1988-01-18

Family

ID=30969087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9983786U Pending JPS636740U (en]) 1986-07-01 1986-07-01

Country Status (1)

Country Link
JP (1) JPS636740U (en])

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